4 quad npn & pnp general purpose amplifier these compl e mentary devices can be used in switches with collector currents of 10 a to 100 ma. these devices are best used when space is the primary consideration. sourced from process 23 & 66. see 2n3904 (npn) & 2n3906 (pnp) for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 40 v v cbo collector-base voltage 40 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 200 ma t j , t stg operating and storage junction temperature range -55 to +150 c symbol characteristic max units mmpq6700 p d total device dissipation derate above 25 c 1000 8.0 mw mw/ c r ja thermal resistance, junction to ambient effective 4 die each die 125 240 c/w c/w ? 1997 fairchild semiconductor corporation mmpq6700 notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. 3) all voltages (v) and currents (a) are negative polarity for pnp transistors. mmpq6700 transistor type c1 b1 e1 & c2 b2 e2 npn c3 b3 e3 & c4 b4 e4 pnp soic-16 mark: mmpq6700 c1 c1 c2 c2 c3 c3 c4 c4 e1 b1 e2 b2 e3 b3 e4 b4 pin #1
electrical characteristics ta = 25 c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 10 ma, i b = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 5.0 v i cbo collector-cutoff current v cb = 30 v, i e = 0 50 na i ebo emitter-cutoff current v eb = 4.0 v, i c = 0 50 na on characteristics* h fe dc current gain v ce = 1.0 v, i c = 0.1 ma v ce = 1.0 v, i c = 1.0 ma v ce = 1.0 v, i c = 10 ma 30 50 70 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.25 v v be( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.90 v small signal characteristics c ob output capacitance v cb = 5.0 v, f = 100 khz 4.5 pf c ib input capacitance v be = 0.5 v, f = 100 khz pnp v be = 0.5 v, f = 100 khz npn 10 8.0 pf pf f t current-gain bandwidth product i c = 10 ma, v ce = 20 v, f = 100 mhz 200 mhz * pulse test: pulse width 300 s, duty cycle 2.0% quad npn & pnp general purpose amplifier (continued) mmpq6700
f63tnr label esd label esd label f63tnr label 343mm x 342mm x 64mm standard intermediate box soic(16lds) packaging configuration: fi g ure 1.0 components soic(16lds) tape leader and trailer configuration: fi g ure 2.0 cover tape carrier tape note/comments packaging option soic (16lds) packaging information standard (no flow code) l86z packaging type reel size tnr 13" dia rail/tube - qty per reel/tube/bag 2,500 45 box dimension (mm) 343x64x343 530x130x83 max qty per box 5,000 13,500 weight per unit (gm) 0.1437 0.1437 weight per reel (kg) 0.7735 - f63tnr label sample lot: cbvk741b019 fsid: ndm3000 d/c1: d9842 qty1: spec rev: spec: qty: 2500 d/c2: qty2: cpn: n/f: f (f63tnr)3 soic-16 unit orientation f d85ab ndm3001 f d85ab ndm3001 pin 1 static dissipative embossed carrier tape
soic-16 tape and reel data, continued july 1999, rev. b p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 16mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.646 +0.078/-0.000 16.4 +2/0 0.882 22.4 0.626 0.764 15.9 19.4 13" diameter option dim a max w3 w2 max measured at hub w1 measured at hub notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 10 deg maximum component rotation 0.9mm maximum 0.9mm maximum sketch c (top view) component lateral movement typical component cavity center line 10 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(16lds) embossed carrier tape configuration: fi g ure 3.0 soic(16lds) reel configuration: fi g ure 4.0 dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc soic ( 16lds ) (16mm) 6.60 +/-0.30 10.35 +/-0.25 16.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 14.25 min 7.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.40 +/-0.40 0.450 +/-0.150 13.0 +/-0.3 0.06 +/-0.02 dim d min dim c b min detail aa
soic-16 (fs pkg code s3) soic-16 package dimensions october 1999, rev. a1 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0.1437 ?2000 fairchild semiconductor international
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
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